| PART |
Description |
Maker |
| NMA5108-A1M |
High Power Broadband Noise Sources 100 Hz to 300 MHz
|
Micronetics, Inc.
|
| NMA5250-A1M |
High Power Broadband Noise Sources 100 Hz to 1500 MHz
|
Micronetics, Inc.
|
| NMA5200-B1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5200-A1M |
High Power Broadband Noise Sources 100 Hz to 1000 MHz
|
Micronetics, Inc.
|
| NMA5111-B1T |
High Power Broadband Noise Sources 1000 MHz to 2000 MHz
|
Micronetics, Inc.
|
| NMA2511-1T |
High Power Broadband Noise Sources 10 MHz to 1500 MHz
|
Micronetics, Inc.
|
| MAX3524EVB_ MAX3524 MAX3524EVB |
Low-Noise, High-Linearity Broadband Amplifier
|
Maxim Integrated Produc...
MAXIM[Maxim Integrated Products]
|
| BFR181W Q62702-F1491 |
NPN Silicon RF Transistor )For low noise/ high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1492 BFR182W |
NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA)
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFR183 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG]
|
| BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP183W Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
